DRAM is a type of random access memory that stores each bit of data in a separate capacitor. The number of electrons stored in the capacitor determines whether the bit is considered 1 or 0. As the capacitor leaks electrons, the information gets lost eventually, unless the charge is refreshed periodically. Because it must be refreshed periodically, it is a dynamic memory as opposed to SRAM and other static memory. Also, since DRAM loses its data when the power supply is removed, it is in the class of volatile memory devices. DRAM is also in the class of solid-state memory.

The first DRAM cell was invented in 1966 by Robert Dennard, a researcher at IBM's Thomas J. Watson Research Center. This cell worked like most modern DRAM cells in that data must be refreshed to restore the capacitance and the data was destroyed after a read operation and must be rewritten. Despite DRAM cells being ubiquitous today, Dennard was one of few people at the time who believed an effective DRAM cell could be developed.

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